1 2 pin 16.5 0.3 10.2 0.2 15.2 0.5 4.0 0.3 13.5 0.5 5.0 0.1 1.4 0.1 0.6 0.1 4.5 0.2 3.1 +0.2 -0.1 |? 3 . 3 0 .1 ?3.20.2 8.2 0.2 2.6 0.2 0.6 0.1 f e a t ur e s m e chan i cal da t a p o s i t i on: a ny maximum ratings and electrical characteristics ratings at 25 a m b i ent t e m pe r a t u r e un l e s s o t h e r w i s e s pe c i f i ed. units maximum recurrent peak reverse voltage v rrm v max imum rms v oltage v r m s v m a x i m um d c b l o c k i ng v o l t a g e v dc v m a x i m um a v e r a g e f o r w a r d t o t a l de v i c e m rectif ied current @t c = 1 33 c i f (a v ) a peak forw ard surge current 8.3ms single half b s i ne - w a v e s u pe r i m p o s e d on r ated l o a d i f s m a m a x i m u m f o r w a r d ( i f = 10 a , t c = 2 5 ) v o l ta g e ( i f = 10 a , t c = 1 2 5 ) ( n ote 1 ) ( i f = 20 a , t c = 2 5 ) (i f = 20 a , t c = 1 2 5 ) maximum reverse current @t c = 2 5 at rated dc blocking voltage @t c = 1 2 5 m a x i m u m t h e r m a l r e s i s t a n c e (note2) r j c /w operating junction temperature range t j storage temperature range t stg 2. thermal resistance from junction to case. m a 30 35 40 45 50 60 90 100 1 0 150 21 2 5 28 32 35 42 63 70 3 0 35 40 4 5 50 60 90 100 v o l t a g e r a n g e: 3 0 - 10 0 v curr e n t : 1 0 a metal silicon junction, majority carrier conduction. ca s e : j e d e c ito-220ac , m o l ded p l a s t i c body schottky barrier rectifiers h i gh c u r r ent c apa c i t y , l o w f o r w a r d v o l t age d r op. n o t e : 1 . p u l s e t e s t: 3 0 0 s pu l s e w i d t h , 1% d u t y c y c l e. - 5 5 - --- + 17 5 - 5 5 - --- + 15 0 t e r m i na l s : s o l de r a b l e per m i l - s t d - 750, 1 1 m e t hod 2026 i r v f 0 . 1 4.0 ito-220ac mbr f 1 0 3 0 - - - mbr f 1 0 100 mbr f mbr f mbr f mbr f mbr f mbr f mbr f mbr f 1 0 3 0 1035 1040 104 5 1050 1060 1090 10100 g ua r d r i ng f or o v er v o l t age p r o t e c t i on. h i gh s u r ge c apa c i t y . f or u s e i n l ow v o l t age, h i g h f r equen c y i n v e r t e r s , f r ee 11 1 whee l i ng, and po l a r i t y p r o t e c t i on a pp li c a t i on s . p o l a r i t y : a s m a r k e d w e i gh t : 0.056 ounces,1.587 gram 15 6.0 v 0 . 57 0.84 0.72 0 .80 0.80 0.70 0.65 - 0.95 0.95 0.85 0.75 single phase,half wave,60hz,resistive or inductive load.for capactive load,derate current by 20%. dimensions in millimeters 3) 3.t c =100 diode semiconductor korea www.diode.kr
pulse width=300 s 1 % d u ty c ycle . 2 . 4 . 6 . 8 1.0 1 . 2 1 . 4 1 . 6 1 . 8 2.0 2.2 1 1 0 1 0 0 2 0 0 mbr1030-mbr1045 mbr1050-mbr1060 mbr1080-mbr10100 1 . 0 04060 20 100 120 140 80 t c = 2 5 0 . 0 1 0.1 . 00 1 mbrf1030-mbrf1060 0 2 4 25 50 75 100 125 150 6 8 1 0 0 3 0 1 100 150 60 9 0 120 10 8.3ms single half sine wave t j =125 amperes average forward output current, amperes fi g. 3 -- typical forward characteri sti c fi g. 4 -- typi cal reverse characteristi c i n s t a n t a n e o u s f o r w a r d v o l t a g e , v o l t s nu m be r o f c y c l e s a t 6 0 h z case t e m pe r a t ur e , instantaneous forward current, peak forward surge current, f i g . 2 - - f o r w ard d e ra t i n g cur v e amperes micro amperes pe r c e n t o f r a t e d p e ak r eve r se v o l t a g e ,% f i g . 1 - - p e a k f o r w ard s ur g e c u rr e nt instantaneous reverse current, mbrf1030 - - - MBRF10100 mbrf1090-MBRF10100 t c =125 www.diode.kr diode semiconductor korea
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